Study on Dynamic Model of Polycrystalline Silicon Photocell

Abstract

The silicon photocell is a common solar cell, and the single crystal silicon photocell is the best among them. But the polycrystalline silicon photocell has many advantages such as simple manufacturing process and low cost. To deeper understand the working principle of polycrystalline crystal silicon photocell and the factors that affect solar cell performance, the equivalent circuit of photocell are simulated by using Multisim Software and AMPS-1D software in this paper. On this basis, we made some experimental simulations, and analyzed the influence of the thickness, doping concentration, local density of states, the potential barrier of before and after contact surface, the HT-EBL and ET-HBL structure of polycrystalline silicon on its open circuit voltage, short circuit current, fill factor and conversion efficiency. The results show that the thickness, doping concentration, local density of states, the potential barrier of before and after contact surface, the HT-EBL and ET-HBL structure of polycrystalline silicon photocell will affect on the open circuit voltage, short circuit current, filling factor and conversion efficiency. The best polycrystalline crystal silicon photocell conversion efficiency could reach 12.384% after adding the before and after contact layer.