Experiment Research on Lightning Indirect Effects of Micro-silicon Inertial Sensor

Abstract

This paper studies the influence of the induced voltage and current which generated by the interaction of lightning electromagnetic pulse with the internal cables of the aircraft on the micro-silicon inertial sensor. The lightning transient voltage damage threshold, vulnerable components and damage modes of the microsilicon inertial sensor are analyzed by the lightning transient voltage pulse injection experiment. Test results show that when the voltage value exceeds 40.7v, it causes serious physical damage to the micro-silicon inertial sensor. Furthermore, the signal amplifier and capacitor are the most vulnerable components, the damage modes are high voltage breakdown of capacitor and high current burnout of amplifier.